Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications

Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such could be a competitive alternative for solid-state nonvolatile memory. For Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol-1-yl)-borohydride and bipy 2,2?-bipyridine, voltage-controlled isothermal changes in electronic structure state demonstrated are accompanied by conductance. Higher conductance seen with [Fe{H2B(pz)2}2(bipy)] high state, while lower occurs low state. Plausibly, there potential here low-cost memory because essential thin films easily fabricated. However, successful device fabrication does not mean that has practical value. Here, we discuss progress challenges yet facing devices, which considered silicon.